features low voltage maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =2v,i c =0.5a 100 320 collector-emitter saturation voltage v ce(sat) i c =1.5a,i b =30ma 2 v base-emitter voltage v be v ce =2v,i c =0.5a 1 v transition frequency f t v ce =2v,i c =500ma 120 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 40 pf classification of h fe(1) rank o y range 100-200 160-320 marking go gy sot-89 1. base 2. collector 3. emitter 1 2 3 KTC4375 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTC4375 2 date:2011/05 www.htsemi.com semiconductor jinyu
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